Metal oxide are attracting great interests in the electronics field as a promising active layer
candidate for various uses including wearable sensors, flexible display, and LED displays. The
current status of manufacturing relies on cleanroom manufacturing, which can be time consuming
and costly. Consequently, a repeatable and reliable process to fabricate stable, large scale TFT is
needed for manufacturing and consumer’s need. Metal oxides have proven their values to be the
next generation display for their hi-performance electrical characteristic, abundance, and straight
forward fabrication method. In particular, system consists of Indium-Gallium-Zinc-Oxide (IGZO)
has demonstrated stability as well as high electrical performance. Science then, TFTs with IGZO
systems had prompt extensive research in the solution process field. Since the conventional method
are limited by sample size and processing time, solution-processing had opened gateway to more
flexible, even large-scale fabrication with way less steps and processing time. The major drawback
of solution processing the its instability, uncertainty, and weaker device performance comparing
to those fabricated in the cleanroom environment. In this work, several methods were investigated
including direct light patterning and UV and ozone treatment of sample surface to improve device
performance. A gallium rich IGZO solution TFT with 2:2:1 molar ratio was made with direct light
patterning method and compared to conventionally made IGZO TFT. It is shown that direct light
pattering could drastically enhance device stability and performances. Other factors such as cluster
size, interface treatment, and etchant composition could greatly affect the outcome as well.