- Boyle, TJ;
- Rossi, A;
- Walker, M;
- Carlson, P;
- Miller, MK;
- Zhao, J;
- Klavins, P;
- Jozwiak, C;
- Bostwick, A;
- Rotenberg, E;
- Taufour, V;
- Vishik, IM;
- da Silva Neto, EH
We report a detailed experimental study of the band structure of the recently discovered topological material Hf2Te2P. Using the combination of scanning tunneling spectroscopy and angle-resolved photoemission spectroscopy with surface K doping, we probe the band structure of Hf2Te2P with energy and momentum resolution above the Fermi level. Our experiments show the presence of multiple surface states with a linear Dirac-like dispersion, consistent with the predictions from previously reported band-structure calculations. In particular, scanning tunneling spectroscopy measurements provide experimental evidence for the strong topological surface state predicted at 460meV, which stems from the band inversion between Hf-d and Te-p orbitals. This band inversion comprised of more localized d states could result in a better surface-to-bulk conductance ratio relative to more traditional topological insulators.