An unexpected mode of plastic deformation was observed in damascene Cu interconnect test structure during an in-situ electromigration experiment and before the onset of visible microstructural damages (void, hillock formation). We show here, using a synchrotron technique of white beam X-ray microdiffraction, that the extent of this electromigration-induced plasticityis dependent on the line width. The grain texture of the line might also play an important role. In wide lines, plastic deformation manifests itself as grain bending and the formation of subgrain structures, while only grain rotation is observed in the narrower lines. This early stage behavior can have a direct bearing on the final failure stage of electromigration.

Fracture of crystalline silicon (c-Si) solar cells in photovoltaic modules is a big concern to the photovoltaics (PV) industry. Cell cracks cause performance degradation and warranty issues to the manufacturers. The roots of cell fractures lie in the manufacturing and integration process of the cells and modules as they go through a series of elevated temperature and pressure processes, involving bonding of dissimilar materials, causing residual stresses. Evaluation of the exact physical mechanisms leading to these thermomechanical stresses is highly essential to quantify them and optimize the PV modules to address them. We present a novel synchrotron X-ray microdiffraction based techniques to characterize the stress and fracture in the crystalline silicon PV modules. We show the detailed stress state after soldering and lamination process, using the synchrotron X-ray microdiffraction experiments. We also calculate the maximum tolerable microcrack size in the c-Si cells to sustain the residual stress after lamination. We further demonstrate the effect of these residual stresses on the cell fractures using the widely accepted fracture (4-point bending) tests. These test results show that the soldering and lamination induced localized residual stresses indeed reduce the load-carrying capacity of the c-Si cells.

The speed at which phase change memory devices can operate depends strongly on the crystallization kinetics of the amorphous phase. To better understand factors that affect the crystallization rate, we have investigated crystallization of GeTe films as a function of their deposition temperatures and deposition rates, using X-ray synchrotron radiation and Raman spectroscopy. As-deposited films were found to be fully amorphous under all conditions, even though films deposited at higher temperatures and lower rates experienced lower effective quench rates. Non-isothermal transformation curves show that the apparent crystallization temperature of GeTe films decreases with increasing deposition temperature and decreasing deposition rate. It was found that this correlates with a decrease in the activation energy for nucleation (calculated using Kissinger’s analysis), while the activation energy for crystal growth remained unaffected. From Raman spectroscopy measurements, it was found that increasing the deposition temperature or decreasing the deposition rate, and therefore the effective quench rate, reduces the number of homopolar Te–Te bonds and thereby reduces the barrier to crystal nucleation.

Fracture of silicon crystalline solar cells has recently been observed in increasing percentages especially in solar photovoltaic (PV) modules involving thinner silicon solar cells (<200 μm). Many failures due to fracture have been reported from the field because of environmental loading (snow, wind, etc.) as well as mishandling of the solar PV modules (during installation, maintenance, etc.). However, a significantly higher number of failures have also been reported during module encapsulation (lamination) indicating high residual stress in the modules and thus more prone to cell cracking. We report here, through the use of synchrotron X-ray submicron diffraction coupled with physics-based finite element modeling, the complete residual stress evolution in mono-crystalline silicon solar cells during PV module integration process. For the first time, we unravel the reason for the high stress and cracking of silicon cells near soldered inter-connects. Our experiments revealed a significant increase of residual stress in the silicon cell near the solder joint after lamination. Moreover, our finite element simulations show that this increase of stress during lamination is a result of highly localized bending of the cell near the soldered inter-connects. Further, the synchrotron X-ray submicron diffraction has proven to be a very effective way to quantitatively probe mechanical stress in encapsulated silicon solar cells. Thus, this technique has ultimately enabled these findings leading to the enlightening of the role of soldering and encapsulation processes on the cell residual stress. This model can be further used to suggest methodologies that could lead to lower stress in encapsulated silicon solar cells, which are the subjects of our continued investigations. Copyright © 2017 John Wiley & Sons, Ltd.