- Jani, Hariom;
- Linghu, Jiajun;
- Hooda, Sonu;
- Chopdekar, Rajesh V;
- Li, Changjian;
- Omar, Ganesh Ji;
- Prakash, Saurav;
- Du, Yonghua;
- Yang, Ping;
- Banas, Agnieszka;
- Banas, Krzysztof;
- Ghosh, Siddhartha;
- Ojha, Sunil;
- Umapathy, GR;
- Kanjilal, Dinakar;
- Ariando, A;
- Pennycook, Stephen J;
- Arenholz, Elke;
- Radaelli, Paolo G;
- Coey, JMD;
- Feng, Yuan Ping;
- Venkatesan, T
Antiferromagnetic insulators are a ubiquitous class of magnetic materials, holding the promise of low-dissipation spin-based computing devices that can display ultra-fast switching and are robust against stray fields. However, their imperviousness to magnetic fields also makes them difficult to control in a reversible and scalable manner. Here we demonstrate a novel proof-of-principle ionic approach to control the spin reorientation (Morin) transition reversibly in the common antiferromagnetic insulator α-Fe2O3 (haematite) - now an emerging spintronic material that hosts topological antiferromagnetic spin-textures and long magnon-diffusion lengths. We use a low-temperature catalytic-spillover process involving the post-growth incorporation or removal of hydrogen from α-Fe2O3 thin films. Hydrogenation drives pronounced changes in its magnetic anisotropy, Néel vector orientation and canted magnetism via electron injection and local distortions. We explain these effects with a detailed magnetic anisotropy model and first-principles calculations. Tailoring our work for future applications, we demonstrate reversible control of the room-temperature spin-state by doping/expelling hydrogen in Rh-substituted α-Fe2O3.