This dissertation includes a discussion of the results of measurements of electrical resistivity
for materials under applied pressure extending over a range in pressures from 0 to 27
GPa and temperatures from 1 to 300 K. The primary effect of applying pressure to a solid
is to reduce the interatomic distance and to increase the overlap of the electronic orbitals.
The secondary effects of applying pressure to a solid include the delocalization of electrons
and a broadening of the energy bands. In addition, the application of pressure can induce
a variety of transitions, both electronic and structural. Some of the phenomena observed
during the pressure experiments reported in this dissertation include the pressure-induced
enhancement of the superconducting transition temperature in a recently discovered class
of bismuth-sulfide layered superconductors, the anomalous “dome-like” behavior in the
pressure dependence of the Néel temperature in the first-known synthesis of an itinerant
antiferromagnetic metal with non-magnetic constituents TiAu, and the evolution of the
pressure-induced first-order transition to antiferromagnetism in the Fe-substituted heavy
fermion compound URu2Si2. These and other results including a semiconductor-metal
transition in the normal state of one of the bismuth-sulfide layered superconducting
compounds are a consequence of the electronic and structural transitions that can occur as a
result of the application of pressure. The theoretical context for the experimental results
includes a discussion of the effect of pressure on the relevant parameters in condensed
matter theory including the density of states, the exchange interaction in both the localized
and itinerant models of magnetism, and the electron-phonon coupling parameter, among
others. In particular, the pressure dependence of the magnetic ordering temperature and
the superconducting transition temperature in various materials can be explained in terms
of how the few parameters listed above respond to pressure.