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Open Access Publications from the University of California

Scholarly Works (3 results)

  • Article
Lawrence Berkeley National Laboratory (2009)

The interaction between slow highly-charged ions (SHCI) of different charge states from an electron-beam ion trap and highly oriented pyrolytic graphite (HOPG) surfaces is studied in terms of modification of electronic states at single-ion impact nanosize areas. Results are presented from AFM/STM analysis of the induced-surface topological features combined with Raman spectroscopy. I-V characteristics for a number of different impact regions were measured with STM and the results argue for possible formation of diamond-like nanoscale structures at the impact sites.

    Cover page: Possible Diamond-Like Nanoscale Structures Induced by Slow Highly-Charged Ions on Graphite (HOPG)
    • Article
    Lawrence Berkeley National Laboratory (2008)

    We report on electron emission and defect formation in the interaction between slow (v~;0.3 vBohr) highly charged ions (SHCI) with insulating (type IIa) and semiconducting (type IIb) diamonds. Electron emission induced by 31Pq+ (q=5 to 13), and 136Xeq+ (q=34 to 44) with kinetic energies of 9 kVxq increase linearly with the ion charge states, reaching over 100 electrons per ion for high xenon charge states without surface passivation of the diamond with hydrogen. Yields from both diamond types are up to a factor of two higher then from reference metal surfaces. Crater like defects with diameters of 25 to 40 nm are formed by the impact of single Xe44+ ions. High secondary electron yields and single ion induced defects enable the formation of single dopant arrays on diamond surfaces.

      Cover page: Electron emission and defect formation in the interaction of slow, highly charged ions with diamond surfaces
      • Article
      • Peer Reviewed
      UC Berkeley Previously Published Works (2008)
      The ability to inject dopant atoms with high spatial resolution, flexibility in dopant species, and high single ion detection fidelity opens opportunities for the study of dopant fluctuation effects and the development of devices in which function is based on the manipulation of quantum states in single atoms, such as proposed quantum computers. The authors describe a single atom injector, in which the imaging and alignment capabilities of a scanning force microscope (SFM) are integrated with ion beams from a series of ion sources and with sensitive detection of current transients induced by incident ions. Ion beams are collimated by a small hole in the SFM tip and current changes induced by single ion impacts in transistor channels enable reliable detection of single ion hits. They discuss resolution limiting factors in ion placement and processing and paths to single atom (and color center) array formation for systematic testing of quantum computer architectures in silicon and diamond. © 2008 American Vacuum Society.
        Cover page: Single atom doping for quantum device development in diamond and silicon
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