To fulfill the huge demand from data-abundant applications such as machine learning and computer vision, transistors with higher density, energy efficiency and performance were required by modern integrated circuits (ICs). However, traditional metal oxide semiconductor field effect transistors (MOSFETs) have been scaled down to the atomic limit. Low dimensional materials are good candidates which allow people to keep scaling down due to their excellent electrical properties and stability. Carbon nanotube, one kind of one dimensional (1D) material which attracts many attentions from the researchers due to its intrinsic thin channel body and excellent carrier transport properties. However, the inert surface property of CNT makes depositing robust, low leakage and low EOT gate oxides extremely challenging. Furthermore, as-made carbon nanotube field effect transistors (CNTFETs) are intrinsically p-type due to the electron withdrawal effects. A robust n-type CNTFETs was required to achieve complementary logic. This thesis focuses on the process of using atomic layer deposition (ALD) to deposit gate oxides and the process of using plasma enhanced chemical vapor deposition (PECVD) to dope the CNTFETs extension region.
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