UC Riverside

For the past 50 years technological advancement has been dominated by semiconducting technologies. Transistors have gone from macro scale to micron scaled devices to nanoscale, and CMOS technology has continuously improved to keep up with the aggressive shrinking of these logic and memory devices. However, with the release of CMOS features of 22nm and CMOS manufacturers already researching 5nm die features for devices, it is just a matter of time before CMOS and transistor technology reaches the end of what it can be scaled down to. Also with each scaling power consumption by the device as well as power dissipation from the device, especially due to waste heat becomes an increasing concern[1]. With this in mind, many new technologies have been proposed to either redesign current transistor technology to extend its future or to completely replace it with alternative technologies all together. Contained here-in is a proposed device with the possibility to replace or enhance current transistor design and CMOS processing using Spin Wave systems. The devices comprise a magnetic matrix and spin wave generating/detecting elements placed on the edges of the waveguides. The matrix consists of a grid of magnetic waveguides connected via cross junctions. Magnetic memory elements are incorporated within the junction while the read-in and read-out is accomplished by the spin waves propagating through the waveguides. Presented in this work is experimental data on spin wave propagation through NiFe and YIG magnetic crosses. The obtained experimental data show prominent spin wave signal by the external magnetic field, where both the strength and the direction of the magnetic field define the transport between the cross arms. Also presented is experimental data on the 2-bit magnonic holographic memory built on the double cross YIG structure with micro-magnets placed on the top of each cross. It appears possible to recognize the state of each magnet via the interference pattern produced by the spin waves.