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A highly CMOS compatible hafnia-based ferroelectric diode.

  • Author(s): Luo, Qing
  • Cheng, Yan
  • Yang, Jianguo
  • Cao, Rongrong
  • Ma, Haili
  • Yang, Yang
  • Huang, Rong
  • Wei, Wei
  • Zheng, Yonghui
  • Gong, Tiancheng
  • Yu, Jie
  • Xu, Xiaoxin
  • Yuan, Peng
  • Li, Xiaoyan
  • Tai, Lu
  • Yu, Haoran
  • Shang, Dashan
  • Liu, Qi
  • Yu, Bing
  • Ren, Qiwei
  • Lv, Hangbing
  • Liu, Ming
  • et al.
Abstract

Memory devices with high speed and high density are highly desired to address the 'memory wall' issue. Here we demonstrated a highly scalable, three-dimensional stackable ferroelectric diode, with its rectifying polarity modulated by the polarization reversal of Hf0.5Zr0.5O2 films. By visualizing the hafnium/zirconium lattice order and oxygen lattice order with atomic-resolution spherical aberration-corrected STEM, we revealed the correlation between the spontaneous polarization of Hf0.5Zr0.5O2 film and the displacement of oxygen atom, thus unambiguously identified the non-centrosymmetric Pca21 orthorhombic phase in Hf0.5Zr0.5O2 film. We further implemented this ferroelectric diode in an 8 layers 3D array. Operation speed as high as 20 ns and robust endurance of more than 109 were demonstrated. The built-in nonlinearity of more than 100 guarantees its self-selective property that eliminates the need for external selectors to suppress the leakage current in large array. This work opens up new opportunities for future memory hierarchy evolution.

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