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Scholarly Works (1 results)

Article
Peer Reviewed

Electron and Hole Dynamics in Silicon-Germanium Alloy Measured by Attosecond XUV Transient Absorption

Zürch, M;
Borja, LJ;
Chang, H-T;
Kraus, PM;
Cushing, S;
Kaplan, CJ;
Gandman, A;
Prell, JS;
Pemmaraju, CD;
Prendergast, D;
Neumark, DM;
Leone, SR

UC Berkeley Previously Published Works (2016)

Electron-hole dynamics is measured by attosecond transient absorption in silicongermanium alloy. The germanium atoms act as reporter atoms by time-dependent probing the M4,5-edge, revealing electron and hole dynamics, as well as a new midgap feature.

Cover page: Electron and Hole Dynamics in Silicon-Germanium Alloy Measured by Attosecond XUV Transient Absorption