We report the magnetic response of Pt/Au/GdFeCo trilayers to optical irradiation of the Pt surface. For trilayers with Au thickness greater than 50 nm, the great majority of energy is absorbed by the Pt layer, creating an initial temperature differential of thousands of kelvin between the Pt/Au layers and the GdFeCo layer. The resulting electronic heat current across the metal multilayer lasts for several picoseconds with energy flux in excess of 2TWm-2 and provides sufficient heating to the GdFeCo electrons to induce deterministic reversal of the magnetic moment.

The field of spintronics involves the study of both spin and charge transport in solid-state devices. Ultrafast magnetism involves the use of femtosecond laser pulses to manipulate magnetic order on subpicosecond time scales. We unite these phenomena by using picosecond charge current pulses to rapidly excite conduction electrons in magnetic metals. We observe deterministic, repeatable ultrafast reversal of the magnetization of a GdFeCo thin film with a single sub-10-ps electrical pulse. The magnetization reverses in ~10 ps, which is more than one order of magnitude faster than any other electrically controlled magnetic switching, and demonstrates a fundamentally new electrical switching mechanism that does not require spin-polarized currents or spin-transfer/orbit torques. The energy density required for switching is low, projecting to only 4 fJ needed to switch a (20 nm)³ cell. This discovery introduces a new field of research into ultrafast charge current-driven spintronic phenomena and devices.

We report the magnetic response of Co/Pt multilayers to picosecond electrical heating. Using photoconductive Auston switches, we generate electrical pulses with 5.5 ps duration and hundreds of pico-Joules to pass through Co/Pt multilayers. The electrical pulse heats the electrons in the Co/Pt multilayers and causes an ultrafast reduction in the magnetic moment. A comparison between optical and electrically induced demagnetization of the Co/Pt multilayers reveals significantly different dynamics for optical vs electrical heating. We attribute the disparate dynamics to the dependence of the electron-phonon interaction on the average energy and the total number of initially excited electrons.

We offer a perspective on the prospects of ultrafast spintronics and opto-magnetism as a pathway to high-performance, energy-efficient, and non-volatile embedded memory in digital integrated circuit applications. Conventional spintronic devices, such as spin-transfer-torque magnetic-resistive random-access memory (STT-MRAM) and spin-orbit torque MRAM, are promising due to their non-volatility, energy-efficiency, and high endurance. STT-MRAMs are now entering into the commercial market; however, they are limited in write speed to the nanosecond timescale. Improvement in the write speed of spintronic devices can significantly increase their usefulness as viable alternatives to the existing CMOS-based devices. In this article, we discuss recent studies that advance the field of ultrafast spintronics and opto-magnetism. An optimized ferromagnet-ferrimagnet exchange-coupled magnetic stack, which can serve as the free layer of a magnetic tunnel junction (MTJ), can be optically switched in as fast as ∼3 ps. Integration of ultrafast magnetic switching of a similar stack into an MTJ device has enabled electrical readout of the switched state using a relatively larger tunneling magnetoresistance ratio. Purely electronic ultrafast spin-orbit torque induced switching of a ferromagnet has been demonstrated using ∼6 ps long charge current pulses. We conclude our Perspective by discussing some of the challenges that remain to be addressed to accelerate ultrafast spintronics technologies toward practical implementation in high-performance digital information processing systems.

The ability to control magnetism in sub-picosecond timescales using laser pulses has potential applications in fast magnetic devices. It has been demonstrated that a single femto-second laser pulse can reverse -The magnetization of a film within a few picoseconds [1], a phenomenon called as all-optical switching (AOS). However, this phenomenon thus far has been observed only in ferrimagnetic GdFeCo films. On -The o-Ther hand, ferromagnetic films, which are of greater interest than ferrimagnets in many technological applications, need multiple laser pulses for magnetization reversal [2], making -The overall effect slow and energy inefficient. Fast, singleshot switching of a ferromagnet can open up new avenues for spintronic devices that operate at unprecedented picosecond timescales, -Thereby making -Them viable non-volatile replacements for silicon based RAMs and logic devices.

A single femto-second optical pulse can fully reverse the magnetization of a film within picoseconds. Such fast operation hugely increases the range of application of magnetic devices. However, so far, this type of ultrafast switching has been restricted to ferri-magnetic GdFeCo films. In contrast, all optical switching of ferro-magnetic films require multiple pulses, thereby being slower and less energy efficient. Here, we demonstrate magnetization switching induced by a single laser pulse in various ferromagnetic Co/Pt multilayers grown on GdFeCo, by exploiting the exchange coupling between the two magnetic films. Table-top depth-sensitive time-resolved magneto-optical experiments show that the Co/Pt magnetization switches within 7 ps. This coupling approach will allow ultrafast control of a variety of magnetic films, which is critical for applications.

Up until now, magnetic nanodots used for magnetic random access memory have required spin-polarized currents to transfer the angular momentum needed to switch the magnetization and thereby switch the magnetic memory bit. This particular switching process, however, is limited to nanosecond or greater timescales-too slow for use as low-level cache in energy efficient electronics systems. On the other hand, this work aims to achieve ultrafast femtosecond switching of nanomagnetic dots without the use of spin-polarized currents. Using just linearly polarized light, several research groups have demonstrated all-optical magnetization switching in large GdFeCo magnetic dots, ranging from several microns [1-4] down to 400 nm [5]; this work characterizes the switching behavior as these dots are scaled down further in size, with the aim of minimizing the energy required for switching the magnetic memory bit. The fabrication process, magnetization behavior and optical switching behavior are additionally characterized to better understand how size affects the functionality of these optically-switchable ferrimagnets. Knowledge of this behavior will allow future developments of simultaneously ultrasmall and ultrafast magnetic memory systems, thereby enabling increased data storage in future electronics.

Electrically controllable nonvolatile magnetic memories show great potential for the replacement of conventional semiconductor-based memory technologies. Here, we experimentally demonstrate ultrafast spin-orbit torque (SOT)-induced coherent magnetization switching dynamics in a ferromagnet. We use an ultrafast photoconducting switch and a coplanar strip line to generate and guide a ~9-picosecond electrical pulse into a heavy metal/ferromagnet multilayer to induce ultrafast SOT. We then use magneto-optical probing to investigate the magnetization dynamics with sub-picosecond resolution. Ultrafast heating by the approximately 9 picosecond current pulse induces a thermal anisotropy torque which, in combination with the damping-like torque, coherently rotates the magnetization to obtain zero-crossing of magnetization in ~70 picoseconds. A macro-magnetic simulation coupled with an ultrafast heating model agrees well with the experiment and suggests coherent magnetization switching without any incubation delay on an unprecedented time scale. Our work proposes a unique magnetization switching mechanism toward markedly increasing the writing speed of SOT magnetic random-access memory devices.

Composite multiferroic systems, consisting of a piezoelectric substrate coupled with a ferromagnetic thin film, are of great interest from a technological point of view because they offer a path toward the development of ultralow power magnetoelectric devices. The key aspect of those systems is the possibility to control magnetization via an electric field, relying on the magneto-elastic coupling at the interface between the piezoelectric and the ferromagnetic components. Accordingly, a direct measurement of both the electrically induced magnetic behavior and of the piezo-strain driving such behavior is crucial for better understanding and further developing these materials systems. In this work, we measure and characterize the micron-scale strain and magnetic response, as a function of an applied electric field, in a composite multiferroic system composed of 1 and 2 μm squares of Ni fabricated on a prepoled [Pb(Mg_1/3Nb_2/3)O₃]_0.69-[PbTiO₃]_0.31 (PMN-PT) single crystal substrate by X-ray microdiffraction and X-ray photoemission electron microscopy, respectively. These two complementary measurements of the same area on the sample indicate the presence of a nonuniform strain which strongly influences the reorientation of the magnetic state within identical Ni microstructures along the surface of the sample. Micromagnetic simulations confirm these experimental observations. This study emphasizes the critical importance of surface and interface engineering on the micron-scale in composite multiferroic structures and introduces a robust method to characterize future devices on these length scales.