We present the first direct study of charge density wave (CDW) formation in quasi-2D single layer LaTe2 using high-resolution angle resolved photoemission spectroscopy (ARPES) and low energy electron diffraction (LEED). CDW formation is driven by Fermi surface (FS) nesting, however characterized by a surprisingly smaller gap (~;50 meV) than seen in the double layer RTe3 compounds, extending over the entire FS. This establishes LaTe2 as the first reported semiconducting 2D CDW system where the CDW phase is FS nesting driven. In addition, the layer dependence of this phase in the tellurides and the possible transition from a stripe to a checkerboard phase is discussed.

In conventional superconductors, the electron pairing that allows superconductivity is caused by exchange of virtual phonons, which are quanta of lattice vibration. For high-transition-temperature (high-Tc) superconductors, it is far from clear that phonons are involved in the pairing at all. For example, the negligible change in Tc of optimally doped Bi2Sr2CaCu2O8 (Bi2212) upon oxygen isotope substitution (16O to 18O leads to Tc decreasing from 92 to 91 K) has often been taken to mean that phonons play an insignificant role in this material. Here we provide a detailed comparison of the electron dynamics of Bi2212 samples containing different oxygen isotopes, using angle-resolved photoemission spectroscopy. Our data show definite and strong isotope effects. Surprisingly, the effects mainly appear in broad high-energy humps, commonly referred to as "incoherent peaks." As a function of temperature and electron momentum, the magnitude of the isotope effect closely correlates with the superconducting gap - that is, the pair binding energy. We suggest that these results can be explained in a dynamic spin-Peierls picture, where the singlet pairing of electrons and the electron-lattice coupling mutually enhance each other.

A universal high energy anomaly in the single particle spectral function is reported in three different families of high temperature superconductors by using angle-resolved photoemission spectroscopy. As we follow the dispersing peak of the spectral function from the Fermi energy to the valence band complex, we find dispersion anomalies marked by two distinctive high energy scales, E_1 approx 0.38 eV and E_2 approx 0.8 eV. E_1 marks the energy above which the dispersion splits into two branches. One is a continuation of the near parabolic dispersion, albeit with reduced spectral weight, and reaches the bottom of the band at the Gamma point at approx 0.5 eV. The other is given by a peak in the momentum space, nearly independent of energy between E_1 and E_2. Above E_2, a band-like dispersion re-emerges. We conjecture that these two energies mark the disintegration of the low energy quasiparticles into a spinon and holon branch in the high T_c cup rates.

Graphene has shown great application potential as the host material for next-generation electronic devices. However, despite its intriguing properties, one of the biggest hurdles for graphene to be useful as an electronic material is the lack of an energy gap in its electronic spectra. This, for example, prevents the use of graphene in making transistors. Although several proposals have been made to open a gap in graphene's electronic spectra, they all require complex engineering of the graphene layer. Here, we show that when graphene is epitaxially grown on SiC substrate, a gap of ~;0.26 eV is produced. This gap decreases as the sample thickness increases and eventually approaches zero when the number of layers exceeds four. We propose that the origin of this gap is the breaking of sublattice symmetry owing to the graphene-substrate interaction. We believe that our results highlight a promising direction for band gap engineering of graphene.