- Takei, Kuniharu;
- Fang, Hui;
- Kumar, Bala;
- Kapadia, Rehan;
- Gao, Qun;
- Madsen, Morten;
- Kim, Ha Sul;
- Liu, Chin-Hung;
- Plis, Elena;
- Krishna, Sanjay;
- Bechtel, Hans A;
- Guo, Jing;
- Javey, Ali
Nanoscale size-effects drastically alter the fundamental properties of
semiconductors. Here, we investigate the dominant role of quantum confinement
in the field-effect device properties of free-standing InAs nanomembranes with
varied thicknesses of 5-50 nm. First, optical absorption studies are performed
by transferring InAs "quantum membranes" (QMs) onto transparent substrates,
from which the quantized sub-bands are directly visualized. These sub-bands
determine the contact resistance of the system with the experimental values
consistent with the expected number of quantum transport modes available for a
given thickness. Finally, the effective electron mobility of InAs QMs is shown
to exhibit anomalous field- and thickness-dependences that are in distinct
contrast to the conventional MOSFET models, arising from the strong quantum
confinement of carriers. The results provide an important advance towards
establishing the fundamental device physics of 2-D semiconductors.