Arrays of semimetallic Bi nanowires, fabricated by electrodeposition, exhibit strong finite-size effects in transport properties as the carrier mean-free path is limited by the wire dimensions. We have observed a resistivity enhancement, a very large positive magnetoresistance, and a resistance maximum that depends on the strength and orientation of the magnetic field and the nanowire diameter. These results demonstrate electrodeposited Bi nanowires as a new medium for studying the intricate physics in Bi nanostructures. © 1998 The American Physical Society.

Single-crystal bismuth thin films, fabricated by electrodeposition and suitable annealing, exhibit very large magnetoresistance of 400 000% at 5 K and 300% at 300 K, as well as pronounced Shubnikov–de Haas oscillations. A hybrid structure demonstrates the potential for field sensing with sensitivities of 35%/Oe at 5 K and 0.2%/Oe at 300 K.

Arrays of semimetallic Bi nanowires have been successfully fabricated by electrodeposition. Each nanowire consists of elongated Bi grains along the wire direction. Very large positive magnetoresistance of 300% at low temperatures and 70% at room temperature with quasilinear field dependence has been observed. These features are desirable for wide-range field sensing applications. © 1998 American Institute of Physics.

Trigonal-axis oriented single-crystal Bi thin films have been made by electrodeposition followed by suitable annealing. Very large magnetoresistance with ratios as much as 1500 at 5 K and 2.9 at 300 K under 5 T, Shubnikov-de Haas oscillations, and finite-size effects have been observed. © 1999 The American Physical Society.

We have successfully fabricated multilayered Co/Cu nanowires with different diameters and various layer thicknesses by electrodeposition. They display a large perpendicular giant magnetoresistance up to 11% at room temperature and 22% at 5 K. The spin-flip diffusion length has been directly measured to be about 210 for this system. © 1995 The American Physical Society.

We have studied the magnetoresistance of electrodeposited Bi wires with diameters between 200 nm and 2 μm in magnetic fields up to B=55 T. In zero field, the resistance increases with decreasing temperature, indicating that the mean free path is strongly influenced by the nanowire geometry. The high-field magnetoresistance shows strong dependence on field orientation; typically 200% for B parallel to the wires, and 600%–800% for B perpendicular to the wires. The perpendicular magnetoresistance is well described by a modified two-current model which suggests that the high-field response of the arrays is fairly insensitive to the wire diameter, and is dominated by bulk properties of Bi.

Shubnikov-de Haas oscillations have been observed in Bi thin films fabricated by electrodeposition. The observed dominant oscillation periods of 0.17, 0.08, and (Formula presented) with the magnetic field along the trigonal, binary, and bisectrix axes of Bi, respectively, are in good agreement with those in bulk Bi single crystals. © 2000 The American Physical Society.