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Very large magnetoresistance in electrodeposited single-crystal Bi thin films (invited)

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Single-crystal bismuth thin films, fabricated by electrodeposition and suitable annealing, exhibit very large magnetoresistance of 400 000% at 5 K and 300% at 300 K, as well as pronounced Shubnikov–de Haas oscillations. A hybrid structure demonstrates the potential for field sensing with sensitivities of 35%/Oe at 5 K and 0.2%/Oe at 300 K.

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