Open Access Publications from the University of California

## Antimonide-Based Compound Semiconductors for Quantum Computing

• Author(s): Shojaei, Borzoyeh
The development of dual-gated devices and high quality InAs channels with AlSb barriers led to a demonstration of the gate control of spin-orbit coupling in a high mobility InAs/AlSb quantum well in which the gate-tuned electron mobility exceeded 700,000 cm$^{2}$/V${\cdot}$s. Analysis of low temperature magnetoresistance oscillations indicated the zero field spin-splitting could be tuned via the Rashba effect while keeping the two-dimensional electron gas charge density constant.