The III-Nitrides remain a rich material family for study and new applications. Emerging ultra-wide bandgap (UWBG) semiconductors, such as high Al-content AlGaN, are attractive due to their large direct bandgaps, resulting high critical electric field, and large saturation velocity for electrons. While this materials system has been the subject of intense research and commercial success for several decades, there are many challenges still associated with making practical devices from UWBG III-nitrides, including lattice defects, low mobilities and conductivities, and difficulty forming contacts. In this work, I seek to improve the understanding of these materials when grown by ammonia molecular beam epitaxy (NH3-MBE), first by establishing suitable homoepitaxial AlN buffer layers, followed by characterizing and later avoiding plastic relaxation in graded alloys, and then by integrating these materials into polarization-doped field effect transistors for next-generation RF power amplifiers. Finally, I will present on the growth of an emerging ultra-wide bandgap nitride – aluminum boron nitride (AlBN).AlN films were grown by NH3-MBE with varying V/III ratios and substrate temperatures. The surface morphology was examined by atomic force microscopy and the growth rate was calculated from the Pendellösung fringe spacing obtained from high resolution x-ray diffraction ω-2θ scans. Three growth regimes based on different surface morphologies were identified, most importantly the N-rich step flow growth regime at high temperatures. The differences in surface morphology illustrate the effects of the growth parameters on adatom surface mobility. On and off-axis rocking curve widths of films grown at different V/III ratios were compared to those of the bare substrates, and no additional broadening was observed which indicates that no significant defect formation takes place in the MBE-grown films, which is confirmed by planview transmission electron microscopy. This work shows that NH3-MBE AlN can serve as an insulating buffer layer for high quality electronic devices enabled by precise control over growth regimes.There is a significant lattice mismatch between AlN and lower-Al alloy layers needed for transistor barriers, channels, and contacts. This work demonstrates fully coherent graded AlGaN heterostructures based on AlN templates which could be implemented into future devices. We show the importance of well-controlled growth conditions, AlGaN layer thicknesses, and composition steps through transmission electron microscopy, atomic force microscopy, and high-resolution x-ray diffraction measurements to guide the epitaxial design of future generations of AlGaN-based transistors. We also emphasize the importance of careful analysis of high-resolution x-ray diffraction data in the context of a heterogeneous microstructure, such as one exhibiting crosshatch, in which there are simultaneously heavily dislocated and coherent crystalline regions in a thin layer.To realize high performance, ultra-wide bandgap AlGaN transistors for high-frequency, high-power applications, it is imperative to minimize the access resistance to the conductive, high mobility channel to realize high frequency operation. The relatively low electron affinity of AlGaN presents serious challenges for forming ohmic contacts. In this work, we report on low resistance compositionally graded AlGaN contacts to Al0.75Ga0.25N in a PolFET. The resistances of Si-doped graded contacts are compared to standard alloyed vanadium-based contacts to identical graded PolFET channels. By optimizing the donor density in the graded contacts to counteract the negative volume polarization charge induced by the compositional grade, we achieve one of the lowest-reported specific contact resistances to high-Al content AlGaN – ρc = 7.2×10-7 Ω-cm2.Finally, we demonstrate growth of AlBN by NH3-MBE using a high temperature boron effusion cell. Despite challenging growth conditions, we are able to controllably incorporate boron up to alloy fractions of 6% and maintain the epitaxial wurtzite crystal structure. This represents an important step towards integrating emerging nitride materials with the existing III-nitride ecosystem.