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High-brightness lasers with spectral beam combining on silicon

Abstract

Modern implementations of absorption spectroscopy and infrared-countermeasures demand advanced performance and integration of high-brightness lasers, especially in the molecular fingerprint spectral region. These applications, along with others in communication, remote-sensing, and medicine, benefit from the light source comprising a multitude of frequencies. To realize this technology, a single multi-spectral optical beam of near-diffraction-limited divergence is created by combining the outputs from an array of laser sources. Full integration of such a laser is possible with direct bonding of several epitaxially-grown chips to a single silicon (Si) substrate. In this platform, an array of lasers is defined with each gain material, creating a densely spaced set of wavelengths similar to wavelength division multiplexing used in communications.

Scaling the brightness of a laser typically involves increasing the active volume to produce more output power. In the direction transverse to the light propagation, larger geometries compromise the beam quality. Lengthening the cavity provides only limited scaling of the output power due to the internal losses. Individual integrated lasers have low brightness due to combination of thermal effects and high optical intensities. With heterogeneous integration, many lasers can be spectrally combined on a single integrated chip to scale brightness in a compact platform. Recent demonstrations of 2.0-µm diode and 4.8-µm quantum cascade lasers on Si have extended this heterogeneous platform beyond the telecommunications band to the mid-infrared.

In this work, low-loss beam combining elements spanning the visible to the mid-infrared are developed and a high-brightness multi-spectral laser is demonstrated in the range of 4.6–4.7-µm wavelengths. An architecture is presented where light is combined in multiple stages: first within the gain-bandwidth of each laser material and then coarsely between each spectral band to a single output waveguide. All components are demonstrated on a common material platform with a Si substrate, which lends feasibility to the complete system integration. Particular attention is focused on improving the efficiency of arrayed waveguide gratings (AWGs), used in the dense wavelength combining stage. This requires development of a refined characterization technique involving AWGs in a ring-resonator configuration to reduce measurement uncertainty. New levels of low-loss are achieved for visible, near-infrared, and mid-infrared multiplexing devices. Also, a multi-spectral laser in the mid-infrared is demonstrated by integrating an array of quantum cascade lasers and an AWG with Si waveguides. The output power and spectra are measured, demonstrating efficient beam combining and power scaling. Thus, a bright laser source in the mid-infrared has been demonstrated, along with an architecture and the components for incorporating visible and near-infrared optical bands.

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