UC Santa Barbara

As the quest for high-efficiency light-emitting diodes (LEDs) intensifies, researchers are increasingly focusing on advanced materials such as III-Nitride semiconductors, including AlN, GaN, and InN. Despite their potential, the performance of these LEDs is often impeded by factors such as defect density, quantum-confined Stark effect (QCSE), and suboptimal light extraction efficiency. In this investigation, we explore the impact of incorporating an aluminum gallium nitride (AlGaN) interlayer on the efficiency of III-Nitride LEDs, employing a combination of experimental and computational methodologies. The synergy of experimental results and computational simulations reveals that the introduction of an AlGaN interlayer significantly enhances the overall efficiency of LEDs. This improvement is achieved by ameliorating threading dislocations, attenuating QCSE, and elevating light extraction efficiency. Moreover, the interlayer facilitates superior carrier confinement and diminished electron leakage, resulting in an increased internal and external quantum efficiency [1]. By conducting meticulous lab experiments and employing sophisticated software simulations, we optimized the growth parameters of the AlGaN interlayer, encompassing aspects such as thickness, and alloy composition. The optimized AlGaN interlayer-based III-Nitride LED demonstrated a substantial increase in efficiency compared to its conventional counterparts lacking the interlayer. Additionally, the AlGaN interlayer imparts enhanced thermal stability and robustness to the LEDs [2]. This research elucidates the significance of integrating AlGaN interlayers into III-Nitride LED structures, resulting in markedly improved device performance. The insights garnered from the experimental and computational approaches contribute to the advancement of next-generation high-efficiency LEDs, promoting sustainable and energy-efficient lighting solutions across a diverse range of applications.