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Vacancy-Engineered Phonon Polaritons in α-MoO3
- Shcherbakov, Maxim;
- Hussain, Naveed;
- Sakib, Mashnoon;
- Li, Zhaoxu;
- Harris, William;
- Ahmed, Shehzad;
- Wu, Ruqian;
- Wickramasinghe, H Kumar
Published Web Location
https://doi.org/10.21203/rs.3.rs-3547095/v1Abstract
Low-symmetry van der Waals (vdW) materials have enabled strong confinement of mid-infrared light through hyperbolic phonon polaritons (HPhPs) at the nanoscale. Yet, the bottleneck persists in manipulating the intrinsic polaritonic dispersion to drive further progress in phonon-polaritonics. Here, we present a thermomechanical strategy to manipulate HPhPs in α-MoO 3 using high-pressure and temperature treatment. The hot pressing engineers the stoichiometry of α-MoO 3 by controllably introducing oxygen vacancy defects (OVDs), which cause a semiconductor-to-semimetal transition. Our density functional theory (DFT) and finite-difference time-domain (FDTD) results, combined with experimental studies show that the OVDs induce a metastable metallic state by reducing the bandgap while modifying the intrinsic dielectric permittivity of α-MoO 3 . Photo-induced force microscopy (PiFM) confirms an average dielectric permittivity tunability of |𝚫𝜺/𝜺|≈𝟎.𝟑𝟓 within a Reststrahlen band of α-MoO 3 , resulting in drastic shifts in the HPhP dispersion. The polariton lifetimes for pristine and hot-pressed flakes were measured as 0.92±0.06 and 0.86±0.11 ps, respectively, exhibiting a loss of only 7%, while the group velocity exhibited an increase of 38.8±0.2%. The OVDs in α-MoO 3 provide a low-loss platform that enables active tuning of mid-infrared HPhPs and have a profound impact on applications in super-resolution imaging, nanoscale thermal manipulation, boosted molecular sensing, and on-chip photonic circuits.
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