- Main
Vacancy-Engineered Phonon Polaritons in α-MoO3
Abstract
Low-symmetry van der Waals (vdW) materials have enabled strong confinement of mid-infrared light through hyperbolic phonon polaritons (HPhPs) at the nanoscale. Yet, the bottleneck persists in manipulating the intrinsic polaritonic dispersion to drive further progress in phonon-polaritonics. Here, we present a thermomechanical strategy to manipulate HPhPs in α-MoO 3 using high-pressure and temperature treatment. The hot pressing engineers the stoichiometry of α-MoO 3 by controllably introducing oxygen vacancy defects (OVDs), which cause a semiconductor-to-semimetal transition. Our density functional theory (DFT) and finite-difference time-domain (FDTD) results, combined with experimental studies show that the OVDs induce a metastable metallic state by reducing the bandgap while modifying the intrinsic dielectric permittivity of α-MoO 3 . Photo-induced force microscopy (PiFM) confirms an average dielectric permittivity tunability of |𝚫𝜺/𝜺|≈𝟎.𝟑𝟓 within a Reststrahlen band of α-MoO 3 , resulting in drastic shifts in the HPhP dispersion. The polariton lifetimes for pristine and hot-pressed flakes were measured as 0.92±0.06 and 0.86±0.11 ps, respectively, exhibiting a loss of only 7%, while the group velocity exhibited an increase of 38.8±0.2%. The OVDs in α-MoO 3 provide a low-loss platform that enables active tuning of mid-infrared HPhPs and have a profound impact on applications in super-resolution imaging, nanoscale thermal manipulation, boosted molecular sensing, and on-chip photonic circuits.
Many UC-authored scholarly publications are freely available on this site because of the UC's open access policies. Let us know how this access is important for you.
Main Content
Enter the password to open this PDF file:
-
-
-
-
-
-
-
-
-
-
-
-
-
-