The dependence of oxygen vacancy distributions in BiFeO3 films on oxygen pressure and substrate
- Author(s): Yuan, GL
- Martin, LW
- Ramesh, R
- Uedono, A
- et al.
Published Web Locationhttps://doi.org/10.1063/1.3171939
The epitaxial (001)-oriented 250 nm BiFeO /50 nm SrRuO films were deposited on DyScO and SrTiO substrates, respectively. Following the growth, the cooling in lower oxygen pressure results in the creation of oxygen vacancies at the surface of the BiFeO film and the epitaxial strain drives these vacancies to diffuse from the film surface to the film interface. The SrTiO substrate strongly absorbs oxygen vacancies from the BiFeO film while the DyScO substrate does not. Therefore, the depth distribution of oxygen vacancies depends on the oxygen pressure during cooling, the epitaxial strain, and the substrate absorbing oxygen vacancies. © 2009 American Institute of Physics. 3 3 3 3 3 3 3 3