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Direct Measurement of Terahertz Conductivity in a Gated Monolayer Semiconductor
- Chen, Su-Di;
- Feng, Qixin;
- Zhao, Wenyu;
- Qi, Ruishi;
- Zhang, Zuocheng;
- Abeysinghe, Dishan;
- Uzundal, Can;
- Xie, Jingxu;
- Taniguchi, Takashi;
- Watanabe, Kenji;
- Wang, Feng
Published Web Location
https://doi.org/10.1021/acs.nanolett.5c01605Abstract
Two-dimensional semiconductors and their moiré superlattices have emerged as important platforms for investigating correlated electrons. However, many key properties of these systems, such as the frequency-dependent conductivity, remain experimentally inaccessible because of the mesoscopic sample size. Here we report a technique to directly measure the complex conductivity of electrostatically gated two-dimensional semiconductors in the terahertz frequency range. Applying this technique to a WSe2 monolayer encapsulated in hBN, we observe a clear Drude-like response between 0.1 and 1 THz, in a density range challenging to access even in DC transport. Our work opens a new avenue for studying tunable van der Waals heterostructures using terahertz spectroscopy.
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