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Pressure-induced semiconductor-to-metal phase transition of a charge-ordered indium halide perovskite.

  • Author(s): Lin, Jia
  • Chen, Hong
  • Gao, Yang
  • Cai, Yao
  • Jin, Jianbo
  • Etman, Ahmed S
  • Kang, Joohoon
  • Lei, Teng
  • Lin, Zhenni
  • Folgueras, Maria C
  • Quan, Li Na
  • Kong, Qiao
  • Sherburne, Matthew
  • Asta, Mark
  • Sun, Junliang
  • Toney, Michael F
  • Wu, Junqiao
  • Yang, Peidong
  • et al.
Abstract

Phase transitions in halide perovskites triggered by external stimuli generate significantly different material properties, providing a great opportunity for broad applications. Here, we demonstrate an In-based, charge-ordered (In+/In3+) inorganic halide perovskite with the composition of Cs2In(I)In(III)Cl6 in which a pressure-driven semiconductor-to-metal phase transition exists. The single crystals, synthesized via a solid-state reaction method, crystallize in a distorted perovskite structure with space group I4/m with a = 17.2604(12) Å, c = 11.0113(16) Å if both the strong reflections and superstructures are considered. The supercell was further confirmed by rotation electron diffraction measurement. The pressure-induced semiconductor-to-metal phase transition was demonstrated by high-pressure Raman and absorbance spectroscopies and was consistent with theoretical modeling. This type of charge-ordered inorganic halide perovskite with a pressure-induced semiconductor-to-metal phase transition may inspire a range of potential applications.

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