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Buried-interface crystallization limits the transferability of high-efficiency perovskite precursor compositions
- Kim, Jongbeom;
- Shin, Nahye;
- Jeon, Chaehoon;
- Lee, Seong-hun;
- Paik, Min Jae;
- Chen, Liang;
- Risqi, Andi Muhammad;
- Shin, Tae Joo;
- Seok, Sang Il
Published Web Location
https://doi.org/10.1016/j.joule.2026.102591Abstract
A perovskite precursor solution that delivers power conversion efficiencies (PCEs) exceeding 26% in conventional n-i-p solar cells exhibits severe performance losses when directly applied to inverted p-i-n architectures, revealing that high-efficiency compositions are not inherently transferable. Here, we identify a buried-interface crystallization mismatch, arising from the distinct physicochemical natures of inorganic SnO2 electron-transporting layers and organic self-assembled hole-transporting monolayers (SA-HTLs), as the origin of this divergence. The methylammonium chloride (MACl)-associated intermediate phase, MA2Pb3I8·2DMSO, persists and decomposes with strong underlayer dependence, stabilizing beneficially on SnO2 but impeding crystallization on SA-HTLs. To overcome this limitation, we develop a chloride-origin engineering strategy that decouples chloride functionality from volatile organic ammonium species by incorporating low-solubility lead chloride (PbCl2) with strong Pb–Cl coordination. This enables controlled interfacial desolvation and nucleation on SA-HTLs, suppresses buried defects, and establishes buried-interface crystallization control as a design principle for architecture-convergent, high-efficiency perovskite solar cells.
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