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High-Saturation High-Speed Traveling-Wave InGaAsP–InP Electroabsorption Modulator

Published Web Location

http://ieeexplore.ieee.org/iel5/68/20567/00950740.pdf?isnumber=20567&prod=JNL&arnumber=950740&arSt=1076&ared=1078&arAuthor=Li%2C+G.L.%3B+Pappert%2C+S.A.%3B+Mages%2C+P.%3B+Sun%2C+C.K.%3B+Chang%2C+W.S.C.%3B+Yu%2C+P.K.L.
Abstract

High-saturation power traveling-wave electroabsorption modulators (TW-EAMs) with modulation bandwidth greater than 40 GHz have been demonstrated. Microwave properties of the TW-EAM waveguide are extracted from the measured S-parameters using the equivalent circuit model in [4]. Excellent agreement is obtained between the predicted and the measured frequency responses.

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