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Vacancy defect complexes in silicon: Charges and spin order

  • Author(s): Liu, Y
  • Pan, R
  • Zhang, X
  • Han, J
  • Yuan, Q
  • Tian, Y
  • Yuan, Y
  • Liu, F
  • Wang, Y
  • N'Diaye, AT
  • Arenholz, E
  • Chen, X
  • Sun, Y
  • Song, B
  • Zhou, S
  • et al.
Abstract

© 2016 American Physical Society. We investigate the interaction between charges and spin order of the defect complex V6 in silicon. The first-principles calculations predict spin resolved band splitting incurred by a neutral V6 yet with no net spin. Therefore, any shift of Fermi level can trigger the spin polarization. Both s and p states contribute local moments in the positively charged V6. The ferromagnetic coupling is only obtained between a positively charged V6 and a neutral one. In silicon after neutron irradiation, magnetism is achieved even at room temperature. The 3s∗3p∗ hybrid states of V6 are probably responsible for the observed long-range magnetic order. Our results unravel the role of charged V6 in inducing magnetism and will be useful in understanding and further manipulating the intrinsic properties of defect complexes in silicon and other semiconductors.

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