Skip to main content
eScholarship
Open Access Publications from the University of California

UC Santa Barbara

UC Santa Barbara Previously Published Works bannerUC Santa Barbara

A mode-balanced reconfigurable logic gate built in a van der Waals strata

Abstract

AbstractTwo-dimensional (2D) semiconducting materials, in particular transition-metal dichalcogenides, have emerged as the preferred channel materials for sub-5 nm field-effect transistors (FETs). However, the lack of practical doping techniques for these materials poses a significant challenge to designing complementary logic gates containing both n- and p-type FETs. Although electrical tuning of the polarity of 2D-FETs can potentially circumvent this problem, such devices suffer from the lack of balanced n- and p-mode transistor performance, forming one of the most enigmatic challenges of the reconfigurable 2D-FET technology. Here we provide a solution to this dilemma by judicious use of van der Waals (vdW) materials consisting of conductors, dielectrics and semiconductors forming a 50 nm thin quantum engineered strata that can guarantee a purely vdW-type interlayer interaction, which faithfully preserves the mid-gap contact design and thereby achieves an intrinsically mode-balanced and fully reconfigurable all-2D logic gate. The intrinsically mode-balanced gate eliminates the need for transistor sizing and allows post-fabrication reconfigurability to the transistor operation mode, simultaneously allowing an ultra-compact footprint and increased circuit functionality, which can be potentially exploited to build more area-efficient and low-cost integrated electronics for the internet of things (IoT) paradigm.

Many UC-authored scholarly publications are freely available on this site because of the UC's open access policies. Let us know how this access is important for you.

Main Content
For improved accessibility of PDF content, download the file to your device.
Current View