Optical response of deep defects as revealed by transient photocapacitance and photocurrent spectroscopy in CdTe/CdS solar cells
Published Web Location
https://doi.org/10.1016/j.solmat.2014.02.024
Abstract
Transient photocapacitance (TPC) and photocurrent (TPI) spectroscopy were used to characterize defects in CdTe/CdS solar cells. A broad defect band is observed at an optical energy of 1.28eV above the valence band, and such a defect is not indicated by admittance spectroscopy and drive-level capacitance profiling. Temperature-dependent TPC measurements of the defect band follow a thermal quenching model in which the defect׳s energy, 0.22eV below the conduction band, is consistent with the optical response. We provide a theoretical basis for the use of a thermal quenching model in TPC.
Many UC-authored scholarly publications are freely available on this site because of the UC's open access policies. Let us know how this access is important for you.