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Zn2SbN3: Growth and characterization of a metastable photoactive semiconductor

  • Author(s): Arca, E
  • Perkins, JD
  • Lany, S
  • Mis, A
  • Chen, BR
  • Dippo, P
  • Partridge, JL
  • Sun, W
  • Holder, A
  • Tamboli, AC
  • Toney, MF
  • Schelhas, LT
  • Ceder, G
  • Tumas, W
  • Teeter, G
  • Zakutayev, A
  • et al.
Abstract

Ternary nitride semiconductors with wurtzite-derived crystal structures are an emerging class of materials for optoelectronic applications compatible with GaN and related III-V compounds. In particular, II-IV-V materials such as ZnSnN and ZnGeN have been very actively studied for applications in photovoltaics and light emitting devices. However, many other possible wurtzite-derived ternary nitrides have not been reported, and hence their optical and electrical properties remain unknown. Here, we report on Zn SbN -the first Sb-based nitride and a photoactive semiconductor. Surprisingly, Zn SbN contains Sb in the highest (5+) oxidation state, and in the unusual tetrahedral coordination. This new Zn SbN material has a solar-matched 1.6-1.7 eV band gap and shows near-band-edge room-temperature photoluminescence, demonstrating its promise as an optoelectronic semiconductor. Finally, Zn SbN can be synthesized at low temperature under a wide range of processing conditions, despite being metastable according to theoretical calculations. All these results, as well as the band position measurements, indicate that Zn SbN is a promising emerging semiconductor for applications as an absorber in photovoltaic-and photoelectrochemical solar cells. 2 2 2 2 3 2 3 2 3 2 3 2 3

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