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Defect passivation of transition metal dichalcogenides via a charge transfer van der Waals interface.

  • Author(s): Park, Jun Hong;
  • Sanne, Atresh;
  • Guo, Yuzheng;
  • Amani, Matin;
  • Zhang, Kehao;
  • Movva, Hema CP;
  • Robinson, Joshua A;
  • Javey, Ali;
  • Robertson, John;
  • Banerjee, Sanjay K;
  • Kummel, Andrew C
  • et al.
Abstract

Integration of transition metal dichalcogenides (TMDs) into next-generation semiconductor platforms has been limited due to a lack of effective passivation techniques for defects in TMDs. The formation of an organic-inorganic van der Waals interface between a monolayer (ML) of titanyl phthalocyanine (TiOPc) and a ML of MoS2 is investigated as a defect passivation method. A strong negative charge transfer from MoS2 to TiOPc molecules is observed in scanning tunneling microscopy. As a result of the formation of a van der Waals interface, the ION/IOFF in back-gated MoS2 transistors increases by more than two orders of magnitude, whereas the degradation in the photoluminescence signal is suppressed. Density functional theory modeling reveals a van der Waals interaction that allows sufficient charge transfer to remove defect states in MoS2. The present organic-TMD interface is a model system to control the surface/interface states in TMDs by using charge transfer to a van der Waals bonded complex.

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