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Effect of native defects on optical properties of In x Ga 1-x N alloys

  • Author(s): Li, SX
  • Haller, EE
  • Yu, KM
  • Walukiewicz, W
  • Ager, JW
  • Wu, J
  • Shan, W
  • Lu, H
  • Schaff, WJ
  • et al.

Published Web Location

https://doi.org/10.1063/1.2108118
Abstract

The energy position of the optical-absorption edge and the free-carrier populations in Inx Ga1-x N ternary alloys can be controlled using high-energy He+4 irradiation. The blueshift of the absorption edge after irradiation in In-rich material (x>0.34) is attributed to the band-filling effect (Burstein-Moss shift) due to the native donors introduced by the irradiation. In Ga-rich material, optical-absorption measurements show that the irradiation-introduced native defects are inside the band gap, where they are incorporated as acceptors. The observed irradiation-produced changes in the optical-absorption edge and the carrier populations in Inx Ga1-x N are in excellent agreement with the predictions of the amphoteric defect model. © 2005 American Institute of Physics.

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