Using ex-situ transmission electron microscopy and the recently developed nanoprobe diffraction (NPD) technique, we characterize a nanoindented solution treated gum metal. Lattice rotations are resolved at a 1.2 nm length-scale and shown to be continuous within the nanoindentation pit; further, it is shown that these can be accommodated by a reasonable number of geometrically necessary dislocations at a density of ∼1015/m2. We additionally provide direct evidence that dislocations within the nanoindent, rather than secondary phase nanoparticles, can serve as potent barriers to dislocation motion. We also demonstrate that plasticity in these alloys under nanoindentation can be accommodated solely by dislocation nucleation and propagation, with no competing deformation mechanisms present. Conventional transmission electron microscopy and “g•b” analysis reveal the presence of dislocations on 〈1¯11〉{110} slip systems and highly localized plastic deformation in the form of shear bands on <111>{1¯1¯2} slip systems, similar to previously observed “giant faults”.

We report on the development of a nanometer scale strain mapping technique by means of scanning nano-beam electron diffraction. Only recently possible due to fast acquisition with a direct electron detector, this technique allows for strain mapping with a high precision of 0.1% at a lateral resolution of 1 nm for a large field of view reaching up to 1 μm. We demonstrate its application to a technologically relevant strain-engineered GaAs/GaAsP hetero-structure and show that the method can even be applied to highly defected regions with substantial changes in local crystal orientation. Strain maps derived from atomically resolved scanning transmission electron microscopy images were used to validate the accuracy, precision and resolution of this versatile technique.

Rational design of low-dimensional electronic phenomena at oxide interfaces is currently considered to be one of the most promising schemes for realizing new energy-efficient logic and memory devices. An atomically abrupt interface between paramagnetic LaNiO3 and antiferromagnetic CaMnO3 exhibits interfacial ferromagnetism, which can be tuned via a thickness-dependent metal-insulator transition in LaNiO3. Once fully understood, such emergent functionality could turn this archetypal Mott-interface system into a key building block for the above-mentioned future devices. Here, we use depth-resolved standing-wave photoemission spectroscopy in conjunction with scanning transmission electron microscopy and x-ray absorption spectroscopy, to demonstrate a depth-dependent charge reconstruction at the LaNiO3/CaMnO3 interface. Our measurements reveal an increased concentration of Mn3+ and Ni2+ cations at the interface, which create an electronic environment favorable for the emergence of interfacial ferromagnetism mediated via the Mn4+-Mn3+ ferromagnetic double exchange and Ni2+-O-Mn4+ superexchange mechanisms. Our findings suggest a strategy for designing functional Mott oxide heterostructures by tuning the interfacial cation characteristics via controlled manipulation of thickness, strain, and ionic defect states.