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Band-structure and anomalous contributions to the Hall effect of YbRh2Si2
Abstract
We report on Hall effect measurements on YbRh2Si2 single crystals with different residual resistivity and on LuRh2Si2 single crystal. The temperature dependence of the linear-response Hall coefficient of YbRh2Si2 is described by the anomalous Hall effect and the normal contribution incorporating multi-band effects. Sample dependencies at low T are found and explained by slight changes in the charge-carrier concentrations. © 2007 Elsevier B.V. All rights reserved.
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