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Band-structure and anomalous contributions to the Hall effect of YbRh2Si2

  • Author(s): Friedemann, S
  • Oeschler, N
  • Krellner, C
  • Geibel, C
  • Wirth, S
  • Steglich, F
  • Paschen, S
  • MaQuilon, S
  • Fisk, Z
  • et al.
Abstract

We report on Hall effect measurements on YbRh2Si2 single crystals with different residual resistivity and on LuRh2Si2 single crystal. The temperature dependence of the linear-response Hall coefficient of YbRh2Si2 is described by the anomalous Hall effect and the normal contribution incorporating multi-band effects. Sample dependencies at low T are found and explained by slight changes in the charge-carrier concentrations. © 2007 Elsevier B.V. All rights reserved.

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