Band-structure and anomalous contributions to the Hall effect of YbRh2Si2
Published Web Locationhttps://doi.org/10.1016/j.physb.2007.10.118
We report on Hall effect measurements on YbRh2Si2 single crystals with different residual resistivity and on LuRh2Si2 single crystal. The temperature dependence of the linear-response Hall coefficient of YbRh2Si2 is described by the anomalous Hall effect and the normal contribution incorporating multi-band effects. Sample dependencies at low T are found and explained by slight changes in the charge-carrier concentrations. © 2007 Elsevier B.V. All rights reserved.