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Optical evidence of anderson-mott localization in FeSi

  • Author(s): Degiorgi, L;
  • Hunt, MB;
  • Ott, HR;
  • Dressel, M;
  • Feenstra, BJ;
  • Grüner, G;
  • Fisk, Z;
  • Canfield, P
  • et al.
Abstract

We have investigated the electrodynamic response of single-crystalline FeSi over a frequency range from d.c. to 105 cm-1. At low frequencies, we found evidence for an Anderson-Mott localization behaviour of the low-temperature optical conductivity, while at high frequencies the excitation spectrum resembles that of a conventional semiconductor. The missing spectral weight below the gap energy is redistributed around the gap edge, in disagreement with previous claims based on optical measurements. © 1994 IOP Publishing Ltd.

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