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Open Access Publications from the University of California

19.2% Efficient InP Heterojunction Solar Cell with Electron-Selective TiO2 Contact.

  • Author(s): Yin, Xingtian
  • Battaglia, Corsin
  • Lin, Yongjing
  • Chen, Kevin
  • Hettick, Mark
  • Zheng, Maxwell
  • Chen, Cheng-Ying
  • Kiriya, Daisuke
  • Javey, Ali
  • et al.

Published Web Location

https://doi.org/10.1021/ph500153c
Abstract

We demonstrate an InP heterojunction solar cell employing an ultrathin layer (∼10 nm) of amorphous TiO2 deposited at 120 °C by atomic layer deposition as the transparent electron-selective contact. The TiO2 film selectively extracts minority electrons from the conduction band of p-type InP while blocking the majority holes due to the large valence band offset, enabling a high maximum open-circuit voltage of 785 mV. A hydrogen plasma treatment of the InP surface drastically improves the long-wavelength response of the device, resulting in a high short-circuit current density of 30.5 mA/cm2 and a high power conversion efficiency of 19.2%.

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