Beam Magnification and the Efficiency of Optical Trapping with 790-nm AlGaAs Laser Diodes
- Author(s): Escandon, GJ
- Liu, Y
- Sonek, GJ
- Berns, MW
- et al.
Published Web Locationhttps://doi.org/10.1109/68.285553
The efficiency of dielectric particle confinement with 790-nm AlGaAs laser diode optical traps is investigated as a function of beam magnification and polarization state. When an anamorphic prism pair is used to correct for diode beam ellipticity, trapping efficiencies of nearly 0.37 are achieved with a magnification factor of 3X, laser powers of 4-18 mW, and an overfilled microscope objective entrance aperture. Results are compared for diodes having small (8 μm) and large (57 μm) astigmatisms, but comparable far-field divergence angles. © 1994 IEEE
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