The Hofstadter model is a popular choice for theorists investigating the
fractional quantum Hall effect on lattices, due to its simplicity, infinite
selection of topological flat bands, and increasing applicability to real
materials. In particular, fractional Chern insulators in bands with Chern
number $|C|>1$ can demonstrate richer physical properties than continuum Landau
level states and have recently been detected in experiments. Motivated by this,
we examine the stability of fractional Chern insulators with higher Chern
number in the Hofstadter model, using large-scale infinite density matrix
renormalization group simulations on a thin cylinder. We confirm the existence
of fractional states in bands with Chern numbers $C=1,2,3,4,5$ at the filling
fractions predicted by the generalized Jain series [Phys. Rev. Lett. 115,
126401 (2015)]. Moreover, we discuss their metal-to-insulator phase
transitions, as well as the subtleties in distinguishing between physical and
numerical stability. Finally, we comment on the relative suitability of
fractional Chern insulators in higher Chern number bands for proposed modern
applications.