Most scholars of tribal organization among the Bedouin of the eastern Arab world utilize a two-dimensional, hierarchical model of Bedouin kinship that represents only relations of descent and affinity. This model resembles a genealogy and shows how small descent units are enclosed by larger ones. It implies that tribes grow in size only through biological reproduction. Such a representation of the Bedouin tribe fails to distinguish politically central lineages from politically peripheral lineages and also ignores the processes through which foreign lineages become “attached” as clients to politically powerful, central lineages. To correct and supplement this genealogical model, the author presents a concentric model of Bedouin tribes that adds a “central/peripheral” distinction. This model also includes relations of political “attachment” that can affect the internal morphology and growth of Bedouin tribes in ways that are comparable to the effects of affinal and suckling kinship relations on internal organization. The proposed concentric model thus allows us to represent historical change more accurately and also brings us closer to Bedouin concepts of tribal organization.

Kinship is an important dimension of politics throughout the Middle East and, specifically, in Jordan. At the level of face-to-face negotiations, three kinds of kinship (common descent, affinity, ritual kinship) are invoked in Jordan to garner support from an actor’s kin and create political ties. At the level of large-scale organizations – such as tribes – appeals are made to kinship norms to mobilize members of each organization and enhance group solidarity. At the macroscopic level of national politics, rhetoric about the “national family” is used to try to pacify groups who have lost political battles or who are politically marginal to the decision-making process. Analysis of politics at all three levels can be improved by paying careful attention to kinship.

The low-frequency power spectrum has been measured for ErAs:InAlGaAs diodes and shows at least a ten-times reduction of 1/f noise compared to traditional Al Schottky diodes on the same semiconductor material. These junctions are grown by molecular beam epitaxy, preventing oxidation and other contamination at the junction. The major noise source for these devices is attributed to the sidewalls and not the junction itself. Low-frequency oscillations have also been observed and associated with a deep trap level estimated to be similar to 200 meV below the conduction band edge by the comparison of diodes with different InAlGaAs compositions and confirmed by deep level transient spectroscopy. This deep level could be associated to erbium incorporation in the depletion region.

We demonstrate a molecular beam epitaxy growth technique to create intentionally textured interfaces between semimetallic ErAs and GaAs that result in interface orientations that are different from the substrate. To grow the textured interfaces, ErAs is deposited on (100) GaAs and islands form in an island growth mode. Enough GaAs is then deposited to fill the space between islands with semiconductor. More ErAs is deposited on the ErAs/GaAs surface and the new ErAs islands are thought to nucleate on the exposed top surface of the partially covered islands. The process is repeated to "stack" the islands. By quadratically increasing the amount of ErAs deposited in each repetition, the islands form into cones/pyramids that coalesce into a complete film with an intentionally roughened interface. Compared to a smooth interface between ErAs and GaAs, the Schottky barrier height between textured ErAs and n-GaAs can be reduced from similar to 0.81 to similar to 0.52 eV, and the Schottky barrier height between ErAs and p-GaAs can be increased from similar to 0.38 to similar to 0.63 eV. (c) 2006 American Vacuum Society.

In contrast to traditional metal-semiconductor (i.e., Schottky) junctions, molecular beam epitaxy (MBE)-grown ErAs:InAlGaAs heterojunctions have recently been shown to provide highly "engineerable" electrical rectification characteristics through the tuning of the Schottky barrier height, while maintaining the very low specific capacitance. This letter reports an approximate 10x improvement in the low-frequency noise performance by using MBE-grown ErAs as the Schottky contact instead of evaporated aluminum. The low-frequency noise power spectrum of ErAs devices has been observed to have a 1/f(1.0) frequency dependence. Constant-current bias-dependent measurements have shown a 1.8 power law dependence of the noise spectral density on dc current. (c) 2006 American Institute of Physics.