Lawrence Berkeley National Laboratory

Hyper-Numerical Aperture (Hyper-NA) Extreme Ultraviolet (EUV) lithography is gathering growing support as the technology of choice to sustain the dimensional scaling trajectory of Moore's Law. This transition, which targets resolution down to 5 nm, necessitates several research advances across several key lithography areas, such as patterning materials, imaging with polarization control, and the optimization of the mask structure. In this paper, we briefly review the historical role of the government-industrial partnerships enabling Center for X-Ray Optics (CXRO) pathfinding research for prior EUV lithography generations. We also highlight the role of the Department of Energy's Energy Frontier Research Center (EFRC) on High-Precision Patterning Science (CHiPPS) as a critical initiative to fundamentally address the pervasive stochastic challenges in materials science that limit the RLS (Resolution, Sensitivity, Line Edge Roughness) tradeoff, charting a path toward the Angstrom Era. We then provide a perspective of the research and next generation of infrastructure, such as the Hyper-NA MET, which is needed to enable the patterning of ~5 nm half-pitch features.