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Gapped electronic structure of epitaxial stanene on InSb(111)

  • Author(s): Xu, CZ
  • Chan, YH
  • Chen, P
  • Wang, X
  • Flötotto, D
  • Hlevyack, JA
  • Bian, G
  • Mo, SK
  • Chou, MY
  • Chiang, TC
  • et al.
Abstract

© 2018 American Physical Society. Stanene (single-layer gray tin), with an electronic structure akin to that of graphene but exhibiting a much larger spin-orbit gap, offers a promising platform for room-temperature electronics based on the quantum spin Hall (QSH) effect. This material has received much theoretical attention, but a suitable substrate for stanene growth that results in an overall gapped electronic structure has been elusive; a sizable gap is necessary for room-temperature applications. Here, we report a study of stanene, epitaxially grown on the (111)B-face of indium antimonide (InSb). Angle-resolved photoemission spectroscopy measurements reveal a gap of 0.44 eV, in agreement with our first-principles calculations. The results indicate that stanene on InSb(111) is a strong contender for electronic QSH applications.

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