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Overview and status of the 0.5NA EUV microfield exposure tool at Berkeley Lab
- Author(s): Anderson, C
- Allezy, A
- Chao, W
- Cork, C
- Cork, W
- Delano, R
- Deponte, J
- Dickinson, M
- Gaines, G
- Gamsby, J
- Gullikson, E
- Jones, G
- Meyers, S
- Miyakawa, R
- Naulleau, P
- Rekawa, S
- Salmassi, F
- Vollmer, B
- Zehm, D
- Zhu, W
- et al.
Published Web Location
https://doi.org/10.1117/12.2516339Abstract
© 2019 SPIE. A 0.5-NA extreme ultraviolet micro-field exposure tool has been installed and commissioned at beamline 12.0.1.4 of the Advanced Light Source synchrotron facility at Lawrence Berkeley National Laboratory. Commissioning has demonstrated a patterning resolution of 13 nm half-pitch with annular 0.35-0.55 illumination; a patterning resolution of 8 nm half-pitch with annular 0.1-0.2 illumination; critical dimension (CD) uniformity of 0.7 nm 1σ on 16 nm nominal CD across 80% of the 200 um x 30 um aberration corrected field of view; aerial image vibration relative to the wafer of 0.75 nn RMS and focus control and focus stepping better than 15 nm.