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High On/Off Ratio Memristive Switching of Manganite/Cuprate Bilayer by Interfacial Magnetoelectricity

  • Author(s): Shen, X
  • Pennycook, TJ
  • Hernandez-Martin, D
  • Pérez, A
  • Puzyrev, YS
  • Liu, Y
  • te Velthuis, SGE
  • Freeland, JW
  • Shafer, P
  • Zhu, C
  • Varela, M
  • Leon, C
  • Sefrioui, Z
  • Santamaria, J
  • Pantelides, ST
  • et al.
Abstract

© 2016 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim Memristive switching serves as the basis for a new generation of electronic devices. Conventional memristors are two-terminal devices in which the current is turned on and off by redistributing point defects, e.g., vacancies. Memristors based on alternative mechanisms have been explored, but achieving both high on/off ratio and low switching energy, as needed in applications, remains a challenge. This study reports memristive switching in La0.7Ca0.3MnO3/PrBa2Cu3O7bilayers with an on/off ratio greater than 103and results of density functional theory calculations in terms of which it is concluded that the phenomenon is likely the result of a new type of interfacial magnetoelectricity. More specifically, this study shows that an external electric field induces subtle displacements of the interfacial Mn ions, which switches on/off an interfacial magnetic “dead layer”, resulting in memristive behavior for spin-polarized electron transport across the bilayer. The interfacial nature of the switching entails low energy cost, about of a tenth of atto Joule for writing/erasing a “bit”. The results indicate new opportunities for manganite/cuprate systems and other transition metal oxide junctions in memristive applications.

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