Transmission electron microscopy studies of electrical active GaAs/GaN interface obtained by wafer bonding
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Lawrence Berkeley National Laboratory

Lawrence Berkeley National Laboratory

Lawrence Berkeley National Laboratory

Transmission electron microscopy studies of electrical active GaAs/GaN interface obtained by wafer bonding

  • Author(s): Jasinski, J.
  • Liliental-Weber, Z.
  • Estrada, S.
  • Hu, E.
  • et al.
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