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Zn–Se–Cd–S Interlayer Formation at the CdS/Cu2ZnSnSe4 Thin-Film Solar Cell Interface
- Bär, Marcus;
- Repins, Ingrid;
- Weinhardt, Lothar;
- Alsmeier, Jan-Hendrik;
- Pookpanratana, Sujitra;
- Blum, Monika;
- Yang, Wanli;
- Heske, Clemens;
- Wilks, Regan G;
- Noufi, Rommel
Published Web Location
https://doi.org/10.1021/acsenergylett.7b00140Abstract
Abstract The chemical structure of the CdS/Cu2ZnSnSe4 (CZTSe) interface was studied by a combination of electron and X-ray spectroscopies with varying surface sensitivity. We find the CdS chemical bath deposition causes a “redistribution” of elements in the proximity of the CdS/CZTSe interface. In detail, our data suggest that Zn and Se from the Zn-terminated CZTSe absorber and Cd and S from the buffer layer form a Zn–Se–Cd–S interlayer. We find direct indications for the presence of Cd–S, Cd–Se, and Cd–Se–Zn bonds at the buffer/absorber interface. Thus, we propose the formation of a mixed Cd(S,Se)–(Cd,Zn)Se interlayer. We suggest the underlying chemical mechanism is an ion exchange mediated by the amine complexes present in the chemical bath.
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