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Single crystal growth and characterization of URu2Si2

  • Author(s): Haga, Y;
  • Matsuda, TD;
  • Tateiwa, N;
  • Yamamoto, E;
  • Onuki, Y;
  • Fisk, Z
  • et al.
Abstract

We review recent progress in single crystal growth and study of electronic properties in. Czocharalski pulling, using purified uranium metal and subsequent annealing under ultra-high vacuum, is successfully applied to this compound, and it yields the highest residual resistivity ratio. These high-quality single crystals allow us to investigate Fermi surfaces using quantum oscillation and to make detailed transport measurements at low temperature.

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