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Single crystal growth and characterization of URu2Si2
Published Web Location
https://doi.org/10.1080/14786435.2014.974711Abstract
We review recent progress in single crystal growth and study of electronic properties in. Czocharalski pulling, using purified uranium metal and subsequent annealing under ultra-high vacuum, is successfully applied to this compound, and it yields the highest residual resistivity ratio. These high-quality single crystals allow us to investigate Fermi surfaces using quantum oscillation and to make detailed transport measurements at low temperature.
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