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Open Access Publications from the University of California

Large quantum-spin-Hall gap in single-layer 1T' WSe2.

  • Author(s): Chen, P
  • Pai, Woei Wu
  • Chan, Y-H
  • Sun, W-L
  • Xu, C-Z
  • Lin, D-S
  • Chou, MY
  • Fedorov, A-V
  • Chiang, T-C
  • et al.
Abstract

Two-dimensional (2D) topological insulators (TIs) are promising platforms for low-dissipation spintronic devices based on the quantum-spin-Hall (QSH) effect, but experimental realization of such systems with a large band gap suitable for room-temperature applications has proven difficult. Here, we report the successful growth on bilayer graphene of a quasi-freestanding WSe2 single layer with the 1T' structure that does not exist in the bulk form of WSe2. Using angle-resolved photoemission spectroscopy (ARPES) and scanning tunneling microscopy/spectroscopy (STM/STS), we observe a gap of 129 meV in the 1T' layer and an in-gap edge state located near the layer boundary. The system's 2D TI characters are confirmed by first-principles calculations. The observed gap diminishes with doping by Rb adsorption, ultimately leading to an insulator-semimetal transition. The discovery of this large-gap 2D TI with a tunable band gap opens up opportunities for developing advanced nanoscale systems and quantum devices.

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