Precision Manufacturing Group
Parent: Laboratory for Manufacturing and Sustainability
eScholarship stats: Breakdown by Item for May through August, 2026
| Item | Title | Total requests | Download | View-only | %Dnld |
|---|---|---|---|---|---|
| 4h56k1ch | Advanced monitoring of machining operations | 657 | 331 | 326 | 50.4% |
| 4hw2r7qc | Material Removal Mechanisms in Lapping and Polishing | 479 | 242 | 237 | 50.5% |
| 29g1z2t6 | Wafer-Scale CMP Modeling of With-in Wafer Non-Uniformity | 380 | 61 | 319 | 16.1% |
| 8rf718jm | Recent Advances in Mechanical Micromachining | 326 | 189 | 137 | 58.0% |
| 7xx6j4s5 | Effect of Ceria Abrasives on Planarization Efficiency in STI CMP Process | 298 | 61 | 237 | 20.5% |
| 4ct2n4jh | Review of Chemical-Mechanical Planarization Modeling for Integrated Circuit Fabrication: From Particle Scale to Die and Wafer Scales | 280 | 65 | 215 | 23.2% |
| 3wk862xb | Chip Scale Prediction of Nitride Erosion in High Selectivity STI CMP | 242 | 37 | 205 | 15.3% |
| 5tp0299m | Precision Manufacturing Process Monitoring With Acoustic Emission | 217 | 43 | 174 | 19.8% |
| 0pn4r425 | Copper CMP Modeling: Millisecond Scale Adsorption Kinetics of BTA in Glycine-Containing Solutions at pH 4 | 172 | 55 | 117 | 32.0% |
| 1kj2b95j | CMP Modeling as a part of Design for Manufacturing | 167 | 37 | 130 | 22.2% |
| 2gz0f5hg | A model of material removal and post process surface topography for copper CMP | 157 | 49 | 108 | 31.2% |
| 40n7p86w | Experimental Investigation of Material Removal Characteristics in Silicon Chemical Mechanical Polishing | 153 | 56 | 97 | 36.6% |
| 4mz5893r | A Study on Pad Surface Characterization and Design for Chemical Mechanical Polishing (CMP)-Fabrication Process and Prototype - | 153 | 11 | 142 | 7.2% |
| 00s0d8v2 | Precision Manufacturing of Imprint Rolls for the Roller Imprinting Process | 151 | 37 | 114 | 24.5% |
| 0n2575s1 | Material Removal Regions in Chemical Mechanical Polishing: Coupling Effects of Slurry Chemicals, Abrasive Size Distribution and Wafer-Pad Contact Area, Part 1 | 151 | 38 | 113 | 25.2% |
| 58r5204t | Multi-Sensor Monitoring System in Chemical Mechanical Planarization (CMP) for Correlations with Process Issues | 150 | 54 | 96 | 36.0% |
| 6vn2918m | Opportunities and Challenges to Sustainable Manufacturing and CMP | 139 | 68 | 71 | 48.9% |
| 12q6g963 | Fundamental Mechanisms of Copper CMP – Passivation Kinetics of Copper in CMP Slurry Constituents | 137 | 36 | 101 | 26.3% |
| 0dq919t9 | Modeling of Pressure Non-Uniformity at a Die Scale For ILD CMP | 136 | 44 | 92 | 32.4% |
| 7bd8p475 | In-Situ Acoustic Emission Monitoring of Surface Chemical Reactions for Copper CMP | 130 | 23 | 107 | 17.7% |
| 9mp099gw | Surface finishes from turning and facing with round nosed tools | 123 | 67 | 56 | 54.5% |
| 06k6x1vm | Evaluation of the Effect of Pad Thickness and Stiffness on Pressure Non-Uniformity at Die-Scale in ILD CMP | 122 | 36 | 86 | 29.5% |
| 326856vn | Pad Contact Area Characterization in Chemical Mechanical Planarization | 122 | 20 | 102 | 16.4% |
| 8kb028c3 | Application of AE Contact Sensing in Reliable Grinding Monitoring | 118 | 43 | 75 | 36.4% |
| 5rk639tt | Designing Imprint Rolls for Fluid Pathway Fabrication | 116 | 39 | 77 | 33.6% |
| 73g339j3 | ADDRESSING PROCESS PLANNING AND VERIFICATION ISSUES WITH MTCONNECT | 111 | 36 | 75 | 32.4% |
| 6dh3x4qr | Modification of surface properties on a nitride based coating films through mirror-quality finish grinding | 105 | 41 | 64 | 39.0% |
| 12g571p1 | Graphical Mapping of AE for Pad Condition Monitoring in Copper CMP | 103 | 28 | 75 | 27.2% |
| 19s438ph | Conditioning Effect on Pad Surface Height Distribution in Copper CMP | 100 | 28 | 72 | 28.0% |
| 97z7428c | Chip Scale Topography Evolution Model for CMP Process Optimization | 99 | 32 | 67 | 32.3% |
| 6th614qz | Technological Approaches in Nanopolishing for Microstructures | 97 | 25 | 72 | 25.8% |
| 1sp832mw | The influence of cutting edge sharpness on surface finish in facing with round nosed cutting tools | 96 | 44 | 52 | 45.8% |
| 9966p85j | Integrated Tribo-Chemical Modeling of Copper CMP | 93 | 26 | 67 | 28.0% |
| 50j5r9b3 | Trajectory generationinhigh-speed,high-precisionmicromillingusing subdivision curves | 92 | 47 | 45 | 51.1% |
| 1m1132dv | Scalability of Tool Path Planning to Micro Machining | 88 | 17 | 71 | 19.3% |
| 26h4f034 | Variation in Machinability of Single Crystal Materials in Micromachining | 87 | 43 | 44 | 49.4% |
| 88h5r4qw | DESIGN AND FABRICATION OF A ROLLER IMPRINTING DEVICE FOR MICROFLUIDIC DEVICE MANUFACTURING | 87 | 31 | 56 | 35.6% |
| 4tr859cp | CMP Modeling as a part of Design for Manufacturing | 84 | 24 | 60 | 28.6% |
| 72h3d5nw | Improvingendmillingsurfacefinishbyworkpiecerotationandadaptive toolpathspacing | 83 | 41 | 42 | 49.4% |
| 9nh338zg | Pad Surface Roughness and Slurry Particle Size Distribution Effects on Material Removal Rate in Chemical Mechanical Planarization | 78 | 35 | 43 | 44.9% |
| 602066ws | Modeling and simulation of material removal with particulate flows | 74 | 34 | 40 | 45.9% |
| 8v6445zj | Tribo-Chemical Modeling of Copper CMP | 66 | 21 | 45 | 31.8% |
| 6991f42f | Variation in Machinability of Single Crystal Materials in Micromechanical Machining | 65 | 9 | 56 | 13.8% |
| 9dx0w8gz | A study on initial contact detection for precision micro-mold and surface generation of vertical side walls in micromachining | 62 | 20 | 42 | 32.3% |
| 76x709kc | MEMS Applications of CMP | 55 | 17 | 38 | 30.9% |
| 1542q9pt | Design Rules for the Development of a New-Concept Pad | 53 | 14 | 39 | 26.4% |
| 5f00043r | Analysis of Tool and Workpiece Interaction in Diamond Turning using Graphical Analysis of Acoustic Emission | 52 | 22 | 30 | 42.3% |
| 2fs8q35q | On impinging near-field granular jets | 48 | 21 | 27 | 43.8% |
| 8d02d2dd | Subdivision Surfaces for Procedural Design of Optimal Imprint Rolls | 48 | 23 | 25 | 47.9% |
| 8x62k046 | Geometric Approaches for Reducing Burr Formation in Planar Milling by Avoiding Tool Exits | 46 | 29 | 17 | 63.0% |
Note: Due to the evolving nature of web traffic, the data presented here should be considered approximate and subject to revision. Learn more.