Skip to main content
eScholarship
Open Access Publications from the University of California

Dimensionality-Mediated Semimetal-Semiconductor Transition in Ultrathin PtTe_{2} Films.

  • Author(s): Lin, Meng-Kai;
  • Villaos, Rovi Angelo B;
  • Hlevyack, Joseph A;
  • Chen, Peng;
  • Liu, Ro-Ya;
  • Hsu, Chia-Hsiu;
  • Avila, José;
  • Mo, Sung-Kwan;
  • Chuang, Feng-Chuan;
  • Chiang, T-C
  • et al.
Abstract

Platinum ditelluride (PtTe_{2}), a type-II Dirac semimetal, remains semimetallic in ultrathin films down to just two triatomic layers (TLs) with a negative gap of -0.36  eV. Further reduction of the film thickness to a single TL induces a Lifshitz electronic transition to a semiconductor with a large positive gap of +0.79  eV. This transition is evidenced by experimental band structure mapping of films prepared by layer-resolved molecular beam epitaxy, and by comparing the data to first-principles calculations using a hybrid functional. The results demonstrate a novel electronic transition at the two-dimensional limit through film thickness control.

Main Content
For improved accessibility of PDF content, download the file to your device.
Current View