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Dimensionality-Mediated Semimetal-Semiconductor Transition in Ultrathin PtTe_{2} Films.

  • Author(s): Lin, Meng-Kai
  • Villaos, Rovi Angelo B
  • Hlevyack, Joseph A
  • Chen, Peng
  • Liu, Ro-Ya
  • Hsu, Chia-Hsiu
  • Avila, José
  • Mo, Sung-Kwan
  • Chuang, Feng-Chuan
  • Chiang, T-C
  • et al.
Abstract

Platinum ditelluride (PtTe_{2}), a type-II Dirac semimetal, remains semimetallic in ultrathin films down to just two triatomic layers (TLs) with a negative gap of -0.36  eV. Further reduction of the film thickness to a single TL induces a Lifshitz electronic transition to a semiconductor with a large positive gap of +0.79  eV. This transition is evidenced by experimental band structure mapping of films prepared by layer-resolved molecular beam epitaxy, and by comparing the data to first-principles calculations using a hybrid functional. The results demonstrate a novel electronic transition at the two-dimensional limit through film thickness control.

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