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Terahertz electron-hole recollisions in GaAs/AlGaAs quantum wells: robustness to scattering by optical phonons and thermal fluctuations.
- Author(s): Banks, Hunter
- Zaks, Ben
- Yang, Fan
- Mack, Shawn
- Gossard, Arthur C
- Liu, Renbao
- Sherwin, Mark S
- et al.
Published Web Location
https://doi.org/10.1103/physrevlett.111.267402Abstract
Electron-hole recollisions are induced by resonantly injecting excitons with a near-IR laser at frequency fNIR into quantum wells driven by a 10 kV/cm field oscillating at fTHz=0.57 THz. At T=12 K, up to 18 sidebands are observed at frequencies fsideband=fNIR+2nfTHz, with -8≤2n≤28. Electrons and holes recollide with total kinetic energies up to 57 meV, well above the ELO=36 meV threshold for longitudinal optical (LO) phonon emission. Sidebands with order up to 2n=22 persist up to room temperature. A simple model shows that LO phonon scattering suppresses but does not eliminate sidebands associated with kinetic energies above ELO.
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