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Terahertz electron-hole recollisions in GaAs/AlGaAs quantum wells: robustness to scattering by optical phonons and thermal fluctuations.

  • Author(s): Banks, Hunter
  • Zaks, Ben
  • Yang, Fan
  • Mack, Shawn
  • Gossard, Arthur C
  • Liu, Renbao
  • Sherwin, Mark S
  • et al.
Abstract

Electron-hole recollisions are induced by resonantly injecting excitons with a near-IR laser at frequency fNIR into quantum wells driven by a 10  kV/cm field oscillating at fTHz=0.57  THz. At T=12  K, up to 18 sidebands are observed at frequencies fsideband=fNIR+2nfTHz, with -8≤2n≤28. Electrons and holes recollide with total kinetic energies up to 57 meV, well above the ELO=36  meV threshold for longitudinal optical (LO) phonon emission. Sidebands with order up to 2n=22 persist up to room temperature. A simple model shows that LO phonon scattering suppresses but does not eliminate sidebands associated with kinetic energies above ELO.

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