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Evaporated tellurium thin films for p-type field-effect transistors and circuits.

  • Author(s): Zhao, Chunsong
  • Tan, Chaoliang
  • Lien, Der-Hsien
  • Song, Xiaohui
  • Amani, Matin
  • Hettick, Mark
  • Nyein, Hnin Yin Yin
  • Yuan, Zhen
  • Li, Lu
  • Scott, Mary C
  • Javey, Ali
  • et al.
Abstract

There is an emerging need for semiconductors that can be processed at near ambient temperature with high mobility and device performance. Although multiple n-type options have been identified, the development of their p-type counterparts remains limited. Here, we report the realization of tellurium thin films through thermal evaporation at cryogenic temperatures for fabrication of high-performance wafer-scale p-type field-effect transistors. We achieve an effective hole mobility of ~35 cm2 V-1 s-1, on/off current ratio of ~104 and subthreshold swing of 108 mV dec-1 on an 8-nm-thick film. High-performance tellurium p-type field-effect transistors are fabricated on a wide range of substrates including glass and plastic, further demonstrating the broad applicability of this material. Significantly, three-dimensional circuits are demonstrated by integrating multi-layered transistors on a single chip using sequential lithography, deposition and lift-off processes. Finally, various functional logic gates and circuits are demonstrated.

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